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| BC337 / BC338 BC337 / BC338 NPN Version 2006-05-30 Power dissipation Verlustleistung CBE General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz NPN 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehause 18 Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Mae [mm] Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Emitter-volt. - Kollektor-Emitter-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Base current - Basisstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur E-B short B open C open VCES VCEO VEBO Ptot IC ICM IB Tj TS 9 Grenzwerte (TA = 25C) BC337 50 V 45 V 5V 625 mW 1) 800 mA 1A 100 mA -55...+150C -55...+150C BC338 30 V 25 V Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 2) VCE = 1 V, IC = 100 mA Group -16 Group -25 Group -40 Group -16 Group -25 Group -40 hFE hFE hFE hFE hFE hFE VCEsat 100 160 250 60 100 170 - Kennwerte (Tj = 25C) Typ. 160 250 400 130 200 320 - Max. 250 400 630 - - - 0.7 V VCE = 1 V, IC = 300 mA Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) IC = 500 mA, IB = 50 mA 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 BC337 / BC338 Characteristics (Tj = 25C) Min. Base-Emitter-voltage - Basis-Emitter-Spannung 2) VCE = 1 V, IC = 300 mA, Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom VCE = 45 V, (B-E short) VCE = 25 V, (B-E short) VCE = 45 V, Tj = 125C, (B-E short) VCE = 25 V, Tj = 125C, (B-E short) Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Available current gain groups per type Lieferbare Stromverstarkungsgruppen pro Typ CCBO RthA - 12 pF < 200 K/W 1) BC327 / BC328 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 - fT - 100 MHz - BC337 BC338 BC337 BC338 ICES ICES ICES ICES - - - - 2 nA 2 nA - - 100 nA 100 nA 10 A 10 A VBE - - 1.2 V Kennwerte (Tj = 25C) Typ. Max. 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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